| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device which can reduce charged-up damages on a semiconductor chip during plasma treatment, depending on the composition of plasma generation gas. SOLUTION: A tubular reaction tube 7 is formed of a dielectric material and one side of the reaction tube 7 is opened as a slit-like blow-off port 12. A plurality of electrodes 9, 10 are disposed outside the reaction tube 7. Plasma generating gas 8, containing rare gas and oxygen gas, is introduced to the reaction tube 7, and a voltage is applied between the electrodes 9, 10, thus generating discharge inside the reaction tube 7 under a pressure of atmosphere or thereabout. The plasma treatment device blows off plasma 13 generated inside the reaction tube 7 from the blow-off port 12 by discharging. The mixing ratio of oxygen gas in the plasma generating gas 8 is set to 2 to 5 vol.%. Electrons generated in the plasma 13 are made to be extinguished by adsorption by oxygen gas. |
