发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 PURPOSE: A non-volatile semiconductor memory is provided to have a simple structure and to certainly implement an operational conditions of an initial setup. CONSTITUTION: A non-volatile semiconductor memory includes a memory cell array(1) having a plurality of non-volatile memory cells, a decode circuit configured to decode address data as input thereto to select a memory cell from the memory cell array(1), and a data sense circuit configured to detect and amplify the data of the selected memory cell of the memory cell array(1). The memory cell array(1) includes an initial setup data region with initial setup data and status data being programmed thereinto. The initial setup data is used for determination of memory operating conditions, and the status data indicates whether the initial setup data region is presently normal or not in functionality.
申请公布号 KR20020026856(A) 申请公布日期 2002.04.12
申请号 KR20010060991 申请日期 2001.09.29
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIMENO TOSHIHIKO;IKEHASHI TAMIO;TAKEUCHI KEN
分类号 G06F12/16;G11C16/02;G11C16/06;G11C16/20;G11C29/04;(IPC1-7):G11C16/06 主分类号 G06F12/16
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