发明名称 MANUFACTURING METHOD OF WIRING MATERIAL FOR SEMICONDUCTOR PACKAGE, MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE, AND WIRING MATERIAL FOR SEMICONDUCTOR PACKAGE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a wiring material for semiconductor packages that can be conveyed in the same way as a conventional lead frame while the method can improve productivity even if a thin wiring material that cannot be easily handled by thinning a resin layer is used in the manufacture of a thin-type semiconductor package, the manufacturing method of the semiconductor package, and the wiring material for semiconductor packages. SOLUTION: This manufacturing method of the wiring material for semiconductor packages includes two steps. In one step, while or after a resin plate used as an insulating layer, a metal plate for wiring used as a wiring layer, and a carrier metal plate used as a carrier layer are laminated so that the resin plate is held between the metal plate for wiring and carrier metal plate with the resin plate as a middle layer, thermocompression bonding is made at temperature for softening the resin plate or more, the metal plate for wiring is bonded to the resin and carrier metal plates, a lamination material comprising the wiring, resin, and carrier layers is formed, and wiring is formed on the metal plate for wiring of the lamination material by etching. In the other step, a lattice-like opening is formed on the carrier metal plate by the etching.
申请公布号 JP2002110859(A) 申请公布日期 2002.04.12
申请号 JP20000302495 申请日期 2000.10.02
申请人 HITACHI METALS LTD 发明人 KUMAMOTO SHINGO;OKIKAWA SUSUMU
分类号 H01L23/14;H01L23/12;(IPC1-7):H01L23/14 主分类号 H01L23/14
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