| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which a gate electrode is fully shielded from a drain electrode, while increase of the parasitic capacity between source and gate is suppressed. SOLUTION: The gate electrode extends in a first direction, while bringing Schottky-contact to a surface of the semiconductor substrate. The drain electrode is provided on one side of the gate electrode at a certain interval from the gate electrode, and is ohmic-contacted to the semiconductor substrate. A source electrode comprises a main part, a overhang part, and a shielding part. The main part makes ohmic-contact with semiconductor substrate, in a region on the side opposite to the drain electrode for the gate electrode. The shielding part is provided between the gate electrode and the drain electrode, extending in the first direction. The overhang part connects the shielding part with the main part, while passing above the gate electrode. The size of the overhang part in the first direction is smaller than that of the shielding part. |
