| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device where the increase of resistance of wiring between picture elements can be restrained, while the aperture area of a light-receiving part is secured as large as possible, and to provide a method for manufacturing the device. SOLUTION: This manufacturing method of a solid-state imaging device, the light-receiving part and a transfer region are formed in a substrate includes a plurality of transfer electrodes, to which a transfer voltage of a prescribed clock is applied when charges formed in the light receiving part and swept out to the transfer region are transferred in a prescribed direction, and wirings between electrodes which connects parts between the transfer electrodes and applies a transfer voltage to a plurality of the transfer electrodes are formed on the substrate and a forming process of the transfer electrodes and the wiring between electrodes consists of a process for forming a conducting film turning to the transfer electrodes and the wiring on the substrate, a process for forming an oxidation restraining film on the conducting film, a process for patterning the oxidation restraining film and the conducting film in patterns of the transfer electrodes and the wiring, and a process for forming an oxide film 34 in a side part of the conducting film by oxidizing the conducting film 11a'.
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