| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride based semiconductor laser device which is capable of projecting a laser beam meeting requirements for a high-density optical disk system and high in reliability. SOLUTION: A semiconductor laser device is equipped with a lattice mismatching layer 12 which is formed of Ga1-xAlxN (0.04<=x<=0.08), and interposed between a GaN contact layer 11 and a GaAlN/GaN super lattice structure clad layer 13, a core region 24 which includes an active layer 16 and is formed on the GaAlN/GaN super lattice structure clad layer 13, and a GaAl/GaN super lattice structure clad layer 19 formed on the core region 24.
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