| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT THEREOF |
| 摘要 |
A method of manufacturing a semiconductor component includes forming a first capacitor electrode (126) over a substrate (110), forming a capacitor dielectric layer (226) over the first capacitor electrode (126), and forming a second capacitor electrode (326) over the capacitor dielectric layer (226). The capacitor dielectric layer (226) is made of aluminum. |
| 申请公布号 |
WO0229865(A2) |
申请公布日期 |
2002.04.11 |
| 申请号 |
WO2001US31035 |
申请日期 |
2001.10.04 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
HENRY, HALDANE, S.;HILL, DARRELL, G.;ABROKWAH, JONATHAN, K.;SADAKA, MARIAM, G. |
| 分类号 |
H01L27/04;H01L21/02;H01L21/316;H01L21/822 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
