| 发明名称 |
Method of forming a dielectric film |
| 摘要 |
A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas. |
| 申请公布号 |
US2002040847(A1) |
申请公布日期 |
2002.04.11 |
| 申请号 |
US20010867767 |
申请日期 |
2001.05.31 |
| 申请人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI |
发明人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI |
| 分类号 |
C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/8238;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/792;(IPC1-7):C23C16/00;C23C14/32;C23C16/22;C23C16/34;C23C16/48 |
主分类号 |
C23C8/02 |
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