发明名称 Apparatus for manufacturing electron source, method for manufacturing electron source, and method for manufacturing image-forming apparatus
摘要 A method for manufacturing an electron source includes the steps of covering a substrate provided with a first electrode and a second electrode by a container, introducing a gas composed of a carbon compound into the container, and forming a carbon film by applying a voltage between the first electrode and the second electrode. The relationship 1/(4/Cx-1/Cz)>=Sout>=4Sact-Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is the conductance from the position of the substrate nearest to the gas inlet to the position of the substrate nearest to the gas outlet, Sout is the effective exhaust rate, Sact is the consumption rate of the gas, and Cz is the conductance from the substrate to the gas outlet. An apparatus for manufacturing an electron source and a method for manufacturing an image-forming apparatus are also disclosed.
申请公布号 US2002042238(A1) 申请公布日期 2002.04.11
申请号 US20010954072 申请日期 2001.09.18
申请人 HIROKI TAMAYO 发明人 HIROKI TAMAYO
分类号 H01J9/02;(IPC1-7):H01J9/02;H01J1/312;H01J1/316 主分类号 H01J9/02
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