发明名称 Interconnections for a semiconductor device and method for forming same
摘要 A method for forming an electrical contact for a semiconductor device comprises the steps of providing a semiconductor wafer section having a major surface with a plurality of conductive pads thereon and electrically coupling each pad with an elongated electrical interconnect. Next, each electrical interconnect is encased in a dielectric and the dielectric is sectioned to expose a portion of each interconnect. An inventive structure which can be formed by the inventive method is also described.
申请公布号 US2002041034(A1) 申请公布日期 2002.04.11
申请号 US20010015337 申请日期 2001.12.11
申请人 MODEN WALTER L.;KINSMAN LARRY D.;FARNWORTH WARREN M. 发明人 MODEN WALTER L.;KINSMAN LARRY D.;FARNWORTH WARREN M.
分类号 H01L23/31;H01L23/485;(IPC1-7):H01L23/52 主分类号 H01L23/31
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