| 发明名称 |
Bipolar junction transistor |
| 摘要 |
An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region (80) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector region WCD (90) to be reduced leading to an improvement in Ft/Fmax.
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| 申请公布号 |
US2002041008(A1) |
申请公布日期 |
2002.04.11 |
| 申请号 |
US20010967187 |
申请日期 |
2001.09.28 |
| 申请人 |
HOWARD GREGORY E.;BABCOCK JEFFREY A.;PINTO ANGELO;BALSTER SCOTT |
发明人 |
HOWARD GREGORY E.;BABCOCK JEFFREY A.;PINTO ANGELO;BALSTER SCOTT |
| 分类号 |
H01L21/331;H01L29/08;H01L29/32;H01L29/732;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/331 |
| 代理机构 |
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