| 摘要 |
Disclosed herein is a semiconductor device for protecting a gate dielectric film of a MOS transistor from damage or deterioration due to charges supplied to the MOS transistor during fabrication process that employs plasma. In order to achieve this protection, the semiconductor device of the present invention includes a protective element which shares part of the charges provided to the MOS transistor. The protective element reduces the charge flown into the gate dielectric film of the MOS transistor, and thus decreases the degree of the damage of the gate dielectric film.
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