发明名称 |
Method and apparatus for simulating physical fields |
摘要 |
In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.
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申请公布号 |
US2002042698(A1) |
申请公布日期 |
2002.04.11 |
申请号 |
US20010888868 |
申请日期 |
2001.06.25 |
申请人 |
MEURIS PETER;SCHOENMAKER WIM;MAGNUS WIM |
发明人 |
MEURIS PETER;SCHOENMAKER WIM;MAGNUS WIM |
分类号 |
G06F17/13;G06F17/17;G06F17/50;G06T17/20;(IPC1-7):G06F17/10 |
主分类号 |
G06F17/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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