| 摘要 |
A gate electrode of MISFET Qs for information transmission in a memory cell-forming region is constituted of a built-up film of a polysilicon film and a W film, and gate electrodes of n channel-type MISFET Qn1 and p channel-type MISFET's QP1, Qp2 in a peripheral circuit-forming region are each constituted of a built-up film of a polysilicon and a CoSi layer. The CoSi layer is formed on a source and a drain of these MISFET's, and any CoSi layer is not formed on a source and a drain of the MISFET for information transmission. As a result, refresh characteristics of a memory cell can be improved, and contact holes can be formed in high precision over the CoSi layer.
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