发明名称 |
Nonvolatile memory structures and fabrication methods |
摘要 |
In a nonvolatile memory, select gates are self-aligned spacers formed on sidewalls of floating/control gate stacks. The same mask (1710) is used to remove the select gate layer from over the source lines (144), to etch trench insulation in the source line regions, and to dope the source lines. The memory can be formed in and over an isolated substrate region. The source lines can be doped at least partially before the trench insulation is etched, to prevent a short before the source lines and a region isolating the isolated substrate region from below. The memory can be erased by sectors, or alternatively a chip erase operation can be performed to erase all the cells in parallel. Peripheral transistor gates can be formed from the same layer as the select gates. The select gate spacers have extensions to which low resistance contacts can be made from overlying metal lines.
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申请公布号 |
US2002042180(A1) |
申请公布日期 |
2002.04.11 |
申请号 |
US20010952817 |
申请日期 |
2001.09.14 |
申请人 |
TUAN HSING TI;LI LI-CHUN;CHANG THOMAS TONG-LONG |
发明人 |
TUAN HSING TI;LI LI-CHUN;CHANG THOMAS TONG-LONG |
分类号 |
H01L21/3105;H01L21/8234;H01L21/8247;H01L27/105;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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