发明名称 SEMICONDUCTOR DEVICE WITH PROTECTIVE FUNCTIONS
摘要 ABSTRACTThe semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET 1 and a detecting MOSFET 2 each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit 3 which protects the main MOSFET 1 by a protective transistor 5 when the abnormality is detected thereby, and an impedance element 4 inserted between the protective MOSFET 5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET 2.
申请公布号 WO0229949(A2) 申请公布日期 2002.04.11
申请号 WO2001JP08419 申请日期 2001.09.27
申请人 MATSUSHITA ELECTRIC WORKS, LTD.;NOBE, TAKESHI;AKIYAMA, SHIGEO;FURUMOTO, NORITERU;SUNADA, TAKUYA 发明人 NOBE, TAKESHI;AKIYAMA, SHIGEO;FURUMOTO, NORITERU;SUNADA, TAKUYA
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/02;H01L27/06;H01L27/088;H01L29/78;H03K17/00;H03K17/08;H03K17/082;H03K17/785 主分类号 H01L27/04
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