发明名称 |
HETEROSTRUCTURE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING IT |
摘要 |
A method of manufacturing a semiconductor component includes providing a substrate (110) with a surface (119), providing a layer (120) of undoped gallium arsenide over the surface of the substrate, forming a gate contact (210) over a first portion of the layer, and removing a second portion of the layer. |
申请公布号 |
WO0197274(A3) |
申请公布日期 |
2002.04.11 |
申请号 |
WO2001US15049 |
申请日期 |
2001.05.10 |
申请人 |
MOTOROLA, INC. |
发明人 |
PEATMAN, WILLIAM, C.;JOHNSON, ERIC, S.;REYES, ADOLFO, C. |
分类号 |
H01L29/812;H01L21/337;H01L21/338;H01L29/20;H01L29/778;H01L29/80 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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