发明名称 |
SEMICONDUCTOR DEVICE WITH SHALLOW TRENCH ISOLATION (STI) SIDEWALL IMPLANT |
摘要 |
Semiconductor device and method of manufacturing the same are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. After formation of the oxide liner, first regions of the semiconductor substrate are masked, leaving second regions thereof exposed. N-type devices are to be formed in the first regions and p-type devices are to be formed in the second regions. N-type ions may then be implanted into sidewalls of the trenches in the second regions. The mask is stripped and formation of the semiconductor device may be carried out in a conventional manner. The n-type ions are preferably only implanted into sidewalls where PMOSFETs are formed. |
申请公布号 |
WO0191179(A3) |
申请公布日期 |
2002.04.11 |
申请号 |
WO2001US16140 |
申请日期 |
2001.05.18 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALSMEIER, JOHANN;LAROSA, GIUSEPPE;LUKAITIS, JOSEPH;REAMGARAJAN, RAJESH |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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地址 |
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