发明名称 Semiconductor memory and method of operating the same
摘要 When a plurality of commands are received in succession to read/write data from/to memory cells in accordance with the combination of these commands, a word line for controlling the transfer switches of the memory cells are activated after the reception of one of the commands excluding the first command. This allows control circuits for activating the word lines to be operated at a lower frequency than heretofore, with a reduction in power consumption. Moreover, the word lines are activated based on an address signal that is supplied along with the first command as well as a part of an address signal supplied along with one of the commands excluding the first command. Consequently, the memory region to be selected by these address signals can be smaller, with a reduction in power consumption.
申请公布号 US2002041536(A1) 申请公布日期 2002.04.11
申请号 US20010970657 申请日期 2001.10.05
申请人 FUJITSU LIMITED 发明人 TOMITA HIROYOSHI
分类号 G11C11/407;G11C8/10;G11C8/12;G11C8/14;G11C8/18;G11C11/401;G11C11/406;(IPC1-7):G11C8/00;G11C7/00 主分类号 G11C11/407
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