发明名称 PLATING SYSTEM WITH REMOTE SECONDARY ANODE FOR SEMICONDUCTOR MANUFACTURING
摘要 The present invention provides an electroplating system (50) for semiconductor wafers (66) including a plating chamber (52) connected by a circulating system (52, 56, 58) to a plating solution reservoir (60). The semiconductor wafer (66) is used as the cathode with an inert primary anode (64) in the plating chamber (52). A consumable remote secondary anode (75) in the plating solution reservoir (60) provides the metal ions for plating.
申请公布号 WO0229875(A2) 申请公布日期 2002.04.11
申请号 WO2001US18229 申请日期 2001.06.04
申请人 ADVANCED MICRO DEVICES, INC. 发明人 TRAN, MINH, QUOC
分类号 C25D7/12;C25D21/14;H01L21/288 主分类号 C25D7/12
代理机构 代理人
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