发明名称 |
DEEP TRENCH ETCHING METHOD TO REDUCE/ELIMINATE FORMATION OF BLACK SILICON |
摘要 |
In a method of etching a wafer to form a DT (deep trench) in a plasma reactor, wherein the wafer temperature is greater than the cathode temperature, the improvement of conducting etching to reduce or eliminate "black silicon", comprising:a) providing a plasma etch reactor comprising walls defining an etch chamber; b) providing a plasma source chamber remote from and in communication with the etch chamber, and a wafer chuck or pedestal disposed in the etch chamber to seat a wafer; c) forming a plasma within the plasma source chamber and providing the plasma to the etch chamber; d) supplying RF energy to etch the wafer to a point where the wafer temperature is greater than the cathode temperature; and e) increasing the flow rate of fluorine species near the end of the DT process to provide the isotropic component needed to widen the CD. |
申请公布号 |
WO0229858(A2) |
申请公布日期 |
2002.04.11 |
申请号 |
WO2001US27000 |
申请日期 |
2001.08.30 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
RANADE, RAJIV M.;MATHAD, GANGADHARA S. |
分类号 |
H01L21/00;H01L21/3065;H01L21/308 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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