| 摘要 |
<p>A metal programmable ROM (250) is disclosed that includes a memory cell array having a depth that is defined by a plurality of wordlines (102a-102d) and width that is defined by a plurality of bitlines (104). In addition, a group of memory cells (106d) are coupled between a bitline (104) and ground (112), with each memory cell in the memory cell group coupled to at least one another memory cell in the memory cell group. Finally, a programmed memory cell (106b) is included that is defined by a memory cell transistor having its terminals (202) shorted together.</p> |
