METHOD OF FABRICATING AN OXIDE LAYER ON A SILICON CARBIDE LAYER UTILIZING N2O

摘要

Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer by at least one of oxidizing the silicon carbide layer in an N~2O environment or annealing an oxide layer on the silicon carbide layer in an N~2O environment. Preferably, a predetermined temperature profile and a predetermined flow rate profile of N~2O are providing during the oxidation or the anneal. The predetermined temperature profile and/or predetermined flow rate profile may be constant or variable a nd may include ramps to steady state conditions. The predetermined temperature profile and/or the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.