发明名称 METHOD FOR PRODUCING INTEGRATED CIRCUITS WITH SEMICONDUCTOR COMPONENTS
摘要 microelectronics. SUBSTANCE: method includes deposition of thick superconducting film onto ceramic substrate, high-temperature treatment and milling of film. Ceramic substrate is first milled according to process pattern of circuit, depressions of profile obtained in the process are filled with dry powder of high-temperature conductor Yba2Cu3O7. Then substrate is subjected to high- temperature treatment in oxygen environment at 950 C. Such treatment provides for enhanced density of critical transport current through interconnections and Josephson junctions. Hybrid and other integrated circuits produced by this method may be used for manufacturing superconductor quantum interference detectors and miscellaneous thin- film high-temperature superconductor pieces of equipment. EFFECT: reduced probability of peeling circuit components off the substrate during high-temperature treatment of the latter. 6 dwg
申请公布号 RU2181222(C2) 申请公布日期 2002.04.10
申请号 RU20000111353 申请日期 2000.05.06
申请人 SITET 发明人 FIRSOV N.I.;NOVIKOV I.L.;KHUSNUTDINOV R.F.;KVASOV S.B.
分类号 H01L39/24 主分类号 H01L39/24
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