发明名称 HIGH-PURITY COBALT AND ITS MANUFACTURING METHOD, AND HIGH-PURITY COBALT TARGET
摘要 <p>PROBLEM TO BE SOLVED: To provide high-purity cobalt in which the content of impurities such as copper is reduced, its manufacturing method, and a high-purity cobalt target. SOLUTION: Cobalt containing impurities such as copper is dissolved in a solution of hydrochloric acid to prepare an aqueous solution of cobalt chloride of (0.1 to 3) kmol/m3 hydrochloric acid concentration. Then cobalt is put into the aqueous solution of cobalt chloride, which is agitated while injecting inert gas to form copper contained in the aqueous solution of cobalt chloride into copper of monovalent ion. Successively, the aqueous solution of cobalt chloride is poured into a column packed with anion-exchange resin. Although the copper of monovalent ion is adsorbed by the anion-exchange resin at this time, the cobalt is not adsorbed by the anion-exchange resin. Accordingly, the copper can be separated from the aqueous solution of cobalt chloride. Subsequently, the aqueous solution of cobalt chloride is permitted to evaporate and dried and solidified and is then heated at 623 to 873 K in hydrogen atmosphere to form the cobalt.</p>
申请公布号 JP2002105633(A) 申请公布日期 2002.04.10
申请号 JP20000338288 申请日期 2000.09.29
申请人 SONY CORP;TAMAS KEKESI;ISSHIKI MINORU 发明人 UCHIKOSHI MASAHITO;YOKOYAMA NORIO;TAMAS KEKESI;ISSHIKI MINORU
分类号 C22B3/42;C22B23/00;C22B23/06;C22C19/07;C23C14/34;(IPC1-7):C23C14/34 主分类号 C22B3/42
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