| 摘要 |
A method of forming flaws with high configurational energies in a diamond crystal lattice includes the steps of subjecting the diamond crystal lattice to ion implantation to replace some of the diamond crystal lattice atoms with dopant atoms such as Group VI dopant atoms, to produce a doped diamond, and annealing the doped diamond at a temperature which maximises the density of high energy flaws which form shallow dopant states. |
