发明名称 SILICON CRYSTAL AND SILICON CRYSTAL WAFER AND METHOD OF MANUFACTURING THEM
摘要 <p>PROBLEM TO BE SOLVED: To provide a silicon crystal and silicon crystal wafer and a method of manufacturing them able to reduce manufacturing cost to a large extent and to prevent conversion efficiency from lowering caused by light deterioration. SOLUTION: The silicon crystal is added with Ga and phosphorus as a doping agent. The method of manufacturing silicon crystal is that after adding Ga and phosphorus into silicon molten liquid in a crucible by Czochralski method, a silicon single crystal is grown by making a seed crystal contact with silicon molten liquid and pulling it up while revolving it. The method of manufacturing the silicon crystal is that after adding Ga and phosphorus into the silicon molten liquid in the crucible by Bridgeman method, silicon polycrystal is grown by pulling down the crucible out of heating region.</p>
申请公布号 JP2002104898(A) 申请公布日期 2002.04.10
申请号 JP20000296022 申请日期 2000.09.28
申请人 SHIN ETSU HANDOTAI CO LTD;SHIN ETSU CHEM CO LTD 发明人 FUJIMAKI NOBUYOSHI
分类号 C01B33/02;C30B29/06;H01L21/208;(IPC1-7):C30B29/06 主分类号 C01B33/02
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