发明名称 METHOD FOR FORMING ALUMINUM METAL WIRING
摘要 PURPOSE: A method for forming an aluminum metal wiring is provided to improve reflectance uniformity, and notch and void resistance in an aluminum alloy by improving surface topology. CONSTITUTION: An aluminum film(11) is deposited on a semiconductor substrate. An aluminum nitride film(12) is formed by nitridation of the surface of the aluminum film(11) while restraining the topology of the substrate. Then, an anti-reflective coating(13) is formed on the entire surface of the resultant structure. Preferably, a TiN layer is used as the anti-reflective coating(13).
申请公布号 KR100333643(B1) 申请公布日期 2002.04.10
申请号 KR19950050943 申请日期 1995.12.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG, HEUNG GI;HONG, TAEK GI;JUN, YEONG HO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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