发明名称 |
METHOD FOR FORMING ALUMINUM METAL WIRING |
摘要 |
PURPOSE: A method for forming an aluminum metal wiring is provided to improve reflectance uniformity, and notch and void resistance in an aluminum alloy by improving surface topology. CONSTITUTION: An aluminum film(11) is deposited on a semiconductor substrate. An aluminum nitride film(12) is formed by nitridation of the surface of the aluminum film(11) while restraining the topology of the substrate. Then, an anti-reflective coating(13) is formed on the entire surface of the resultant structure. Preferably, a TiN layer is used as the anti-reflective coating(13).
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申请公布号 |
KR100333643(B1) |
申请公布日期 |
2002.04.10 |
申请号 |
KR19950050943 |
申请日期 |
1995.12.16 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG, HEUNG GI;HONG, TAEK GI;JUN, YEONG HO |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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