| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing exposure mask that can align patterns by first exposure and second exposure with good accuracy and that manufacture a phase shift mask with high accuracy. SOLUTION: In the method for manufacturing an exposure mask, a main pattern 31 is exposed in a main pattern region on a transparent substrate by using an electron beam drawing device in a first exposure process, and an opening pattern is exposed to expose the whole main pattern region by using a laser drawing device in a second exposure process. When an alignment mark 32 is exposed in the region except the main pattern region in the first exposure process, the mark is exposed in a position where a position error due to deformation of the substrate has been corrected. In the second exposure process, the position of the mark 32 is detected by correcting the position error due to the deformation of the substrate and the exposure patterns are aligned based on the detected mark position.</p> |
