发明名称 TEMPERATURE DETECTOR FOR SEMICONDUCTOR ELEMENT MODULE
摘要 PROBLEM TO BE SOLVED: To provide a compact temperature detector detecting a temperature in every semiconductor element in an electric circuit constructed of a plurality of semiconductor modules. SOLUTION: In the electric circuit constructed by using a plurality of semiconductor modules 3-8 having semiconductor elements 3T-8T and built-in diodes 3D-8D for detecting a temperature of the semiconductor elements, a plurality of temperature detection diodes 4D, 6D, and 8D are connected in series so as to supply a constant electric current from a single constant current circuit 2j, while a circuit, in which reference voltage sources 2g-2i generating a reference voltage and comparison circuits 2d-2j comparing the voltage between both ends of the temperature detection diodes 4D, 6D, and 8D with the reference voltage are connected in series, is connected to each of the temperature detection diodes 4D, 6D, and 8D in parallel. In this way, installation of the constant current circuit is not required in each semiconductor element, so that the device can be miniaturized, while an excessive temperature of the semiconductor element can be monitored separately in each semiconductor element.
申请公布号 JP2002107232(A) 申请公布日期 2002.04.10
申请号 JP20000302234 申请日期 2000.10.02
申请人 NISSAN MOTOR CO LTD 发明人 SATO YOSHINORI
分类号 G01K7/01;H01L21/822;H01L27/04;(IPC1-7):G01K7/01 主分类号 G01K7/01
代理机构 代理人
主权项
地址