METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR MATRIX SUBSTRATE, AND EXPOSURE MASK

摘要

PROBLEM TO BE SOLVED: To provided a method for forming a pattern by which a desired preferable pattern can be formed without causing a reduction in the pattern in the boundary where patterns are joined when the whole pattern group is formed by using a plurality of exposure masks. SOLUTION: The method for forming pattern is used to form a pattern group in which a first pattern as the base is repeatedly arranged by using a plurality of exposure masks. When a third region between a first region exposed through a first exposure mask and a second region exposed through a second exposure mask is to be exposed complementarily through the first mask and the second mask, the repeating unit pattern to expose the third region is made different from the first pattern.