发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A semiconductor device includes the first through third semiconductor devices which are stacked on a substrate and the first through third wires for connecting the semiconductor elements and the substrate. The first wires serve to connect electrodes of the first semiconductor element positioned uppermost and electrodes of the second semiconductor element. The second wires serve to connect the electrodes of the second semiconductor element and electrodes of the third semiconductor element. The third wires serve to connect the electrodes of the third semiconductor element and bonding pads of the substrate. Between the first wires and the electrodes of the second semiconductor element and between the second wires and the electrodes of the third semiconductor element, stud bumps are provided so as to form space therebetween, thereby avoiding short-circuits therebetween. <IMAGE> |
申请公布号 |
EP1094517(A3) |
申请公布日期 |
2002.04.10 |
申请号 |
EP20000105690 |
申请日期 |
2000.03.17 |
申请人 |
FUJITSU LIMITED |
发明人 |
OZAWA, KANAME;OKUDA, HAYATO;MOMOTO, RYUJI;AKASHI, YUJI;HIRAIWA, KATSURO |
分类号 |
H01L21/60;H01L23/31;H01L23/485;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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