Semiconductor laser device

摘要

A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1-x1As and a p-type cladding layer of (AlxGa1-x)yIn1-yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output. <IMAGE>