| 摘要 |
PURPOSE: A platinum electrode structure and method for enhancing adhesion between semiconductor substrate and platinum electrode are provided to enhance the adhesion of a Pt thin film by depositing Ti on a semiconductor substrate and modifying the surface of Ti with ion beam of low energy (a few keV), thereby to restrict the influence of an interface resulting from temperature increases. CONSTITUTION: A platinum electrode structure for a semiconductor comprises a semiconductor substrate, a TiN/Ti gradient layer formed at an upper portion of the substrate, and a Pt thin film formed at an upper portion of the gradient layer. A method of enhancing adhesion between a semiconductor substrate and a platinum electrode comprises depositing a Ti seed layer on the semiconductor substrate, forming a TiN/Ti gradient layer by irradiating nitrogen ion beam and injecting reaction gas to the surface of the Ti seed layer, and depositing a Pt thin film on the TiN/Ti gradient layer.
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