| 摘要 |
The present invention provides a method for manufacturing a mask using a substrate comprising a first 102, second 104 and third 106 layers, the method comprising : forming one or more openings 130 through the first layer 102 to an extent that a portion of a first surface of the second layer 104 facing the first layer 102 is exposed; wet-etching at least a first portion of the third layer 106 to an extent that a second surface of the second layer 104 facing the third layer 106 is not exposed, the first portion of the third layer corresponding to the openings 130 of the first layer 102; dry-etching at least a second portion of the third layer 106 to an extent that a portion of the second surface of the second layer 104 facing the third layer 106 is exposed, the second portion of the third layer 106 corresponding to the openings 130 of the first layer 102; and removing the exposed portion of the second layer 104 such that the openings 130 of the first layer 102 extend through the second layer 104. |
