Method for detecting organic contamination by using hemispherical-grain polysilicon layer

摘要

The present invention discloses a method to detect organic contamination in process environment of integrated circuits by using hemispherical-grain polysilicon layer that is formed in the process environment. The organic residue will contaminates the substrate which the hemispherical-grain polysilicon layer is formed thereon so as that the grain size of the polysilicon layer is between about 0.2 to 0.4 micrometers. The grain size of the hemispherical-grain polysilicon layer that is fabricated in a clean process environment is between about 0.5 to 0.8 micrometers. In other words, if organic contamination is residual in process environment, the grain size of the hemispherical-grain polysilicon layer that is fabricated in the process environment is smaller than a certain size to determine that the process environment is contaminated by organic contamination.