发明名称 |
CMOS image sensor and method for fabricating the same |
摘要 |
A CMOS image sensor fabrication method that is capable of preventing a surface of a metal line from being damaged or contaminated is provided. The formed CMOS image sensor includes: a semiconductor structure, wherein the semiconductor structure includes a unit pixel area and a pad area; a metal line formed on the pad area, wherein a portion of the metal line is exposed; a passivation layer formed on the unit pixel area and on the metal line such that the exposed portion is left exposed; a planarized photoresist formed on a portion of the passivation layer; a micro-lens formed on a portion of the planarized photoresist; and an oxide layer formed on the entire formed structure such that the exposed portion is left exposed.
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申请公布号 |
US6369417(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US20010931119 |
申请日期 |
2001.08.16 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE JU-IL |
分类号 |
H01L27/14;H01L27/146;H01L31/02;H01L31/0232;H01L31/10;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L31/062;H01L31/113;H01L31/023 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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