发明名称 |
Double sidewall raised silicided source/drain CMOS transistor |
摘要 |
A method of forming a silicided device includes preparing a substrate by forming device areas thereon; providing structures that are located between the substrate and any silicide layers; forming a first layer of a first reactive material over the formed structures; providing insulating regions in selected portions of the structure; forming a second layer of a second reactive material over the insulating regions and the first layer of first reactive material; reacting the first and second reactive materials to form silicide layers; removing any un-reacted reactive material; forming structures that are located on the silicide layers; and metallizing the device.
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申请公布号 |
US6368960(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US19980113667 |
申请日期 |
1998.07.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC.;SHARP KABUSHIKI KAISHA |
发明人 |
HSU SHENG TENG;MAA JER-SHEN |
分类号 |
H01L21/8238;H01L21/28;H01L21/336;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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