| 摘要 |
In a plasma treatment apparatus having a plasma reaction chamber whose internal surface is covered with a plasma protection member, the protection member is constituted by a sintered silicon carbide substrate and a silicon carbide coating thereon. The resistivity of the silicon carbide substrate is increased by addition of boron which could contaminate the chamber if liberated by plasma attack of the sintered silicon carbide substrate. The deposited silicon carbide film has high purity and low resistivity and filament grooves are used to partition the silicon carbide film. The filament grooves minimize deleterious effects on the plasma density distribution in the chamber otherwise caused by generation of eddy currents on the surface of the low resistivity silicon carbide film. In order to avoid liberation of boron as a result of plasma entering the grooves and attacking exposed portions of the silicon carbide substrate, the filament grooves have widths which are smaller than twice the plasma sheath thickness in contact with the protection member.
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