发明名称 Photoresist frame plating method for forming planarized magnetic pole layer
摘要 A method comprises the step of providing a read-write element on a wafer including at least one magnetoresistive stripe, providing a shared pole layer above the magnetoresistive stripe, and planarizing the shared pole layer. Thereafter, a top pole layer is formed above the shared pole layer. Together, the shared and top pole layers form the write element. Because the shared pole layer is planarized, the gap portion of the write element between the shared and top pole layers is flat. Because of this, improved recording density can be achieved.
申请公布号 US6367146(B1) 申请公布日期 2002.04.09
申请号 US19960635097 申请日期 1996.04.17
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 HAN CHERNG-CHYI;HERNANDEZ DAVID;CHANG JEI-WEI;KAO SHOU-CHEN
分类号 G11B5/31;G11B5/39;(IPC1-7):G11B5/127 主分类号 G11B5/31
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