| 摘要 |
A method of manufacturing a surface acoustic wave apparatus including the steps of forming a first conductive film, depositing a first resist on the first conductive film and patterning the first resist, dry-etching the first conductive film using the patterned first resist to form IDT electrodes, a short-circuit wiring electrode for establishing electrical connection between IDT electrodes, and a second conductive film provided where the second surface acoustic wave device is constructed, removing the second conductive film, depositing a second resist and heating the second resist, patterning the second resist on the electrodes, forming a second conductive film having a thickness which is different from the first conductive film, removing the second resist to form the electrodes of the second surface acoustic wave device and to expose the electrodes of the first surface acoustic wave device, and disconnecting the short-circuit wiring electrode.
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