| 摘要 |
A shielded magnetoresistance (MR) effect sensor includes the following layers that are laminated in sequence: a lower shielding layer, a lower gap layer, a MR effect device, a vertical bias layer that directly contacts side surfaces of the MR effect device, and a lower electrode layer that also directly contacts the side surfaces of the MR effect device. An upper gap layer is laminated on the lower electrode layer and on a top surface of the MR effect device and an upper shielding layer is laminated on the upper gap layer. Alternatively, the vertical bias layer directly contacts the top and side surfaces of the MR effect device and the lower electrode is laminated on the vertical bias layer.
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