| 摘要 |
A nonvolatile memory cell is constructed with a charge transfer window have a charge transfer region smaller than the minimum resolution feature size of used to construct the cell. The window is constructed to the minimum feature size, but its layout position places it partly within the channel region of the cell and partly within a field oxide barrier wall. The part of the window that lies within the channel region does not reach across the width of the channel to an apposing field oxide barrier wall and does not reach along the length of the channel region to either of opposedly laid source and drain regions. The oxide within the window is evenly etched back to reveal the substrate within the channel region. A thin tunneling oxide is then grown within the window, including the part of the window encompassing the field oxide barrier wall.
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