发明名称 |
Metal-insulator-metal diodes and methods of manufacture |
摘要 |
A metal insulator diode device and method of manufacture are described. The device includes a conductive layer and a metal-insulator layer comprising particles of a refractory metal having an intrinsic oxide coating that are suspended in a dielectric binder. The device also includes a second conductive layer disposed to be in direct contact with the insulator metal layer. The conductive layers can include a metal and a dielectric filler material. In one embodiment, the metal-insulator layer comprising particles of a refractory metal such as tantalum. The metal-insulator layer can also be comprised of particles of a dielectric such as titanium dioxide to increase solids content of the metal-insulator layer.
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申请公布号 |
US6368705(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US19990293816 |
申请日期 |
1999.04.16 |
申请人 |
THE GILLETTE COMPANY |
发明人 |
LYNCH ANNE T.;GORDON ERIC S. |
分类号 |
H01L49/02;H01L45/00;H01M10/48;(IPC1-7):B32B5/16 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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