发明名称 |
Method of planarization using selective curing of SOG layer |
摘要 |
A method for planarizing an interlayer dielectric layer formed on a semiconductor substrate having a step, using wet etch, by depositing first and second layers on the semiconductor substrate and selectively curing the second layer in the lower area using electron beams (E-beams). The second layer, e.g., an SOG layer formed of HSQ, has a lower etch rate during the wet etch in the cured area, to thereby easily planarize the substrate of the interlayer dielectric layer.
|
申请公布号 |
US6368906(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US19980209317 |
申请日期 |
1998.12.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN HONG-JAE;GOO JU-SEON |
分类号 |
H01L21/027;H01L21/302;H01L21/3105;H01L21/311;H01L21/316;H01L21/3205;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|