发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A first insulating film, a first wiring layer and a second insulating film are successively formed over a semiconductor substrate. A resist mask is patterned over the second insulating film, and isotropic etching and anisotropic etching are successively carried out to define a plurality of via holes within the second insulating film. The via holes thus have a first portion formed by the isotropic etching and a second portion formed by the anisotropic etching. The resist mask is removed, and a high melting-point metal film is formed over the second insulating film so as to be embedded in the plurality of via holes. The high melting-point metal film and the second insulating film are then polished down to the first portion of each of the via holes such that respective portions of the high melting-point metal film formed within adjacent ones of the plurality of via holes are isolated from each other. A second wiring layer is then formed so as to be electrically connected to the first wiring layer through the portions of the high melting-point metal film formed within the plurality of via holes.
|
申请公布号 |
US6368959(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US19990358367 |
申请日期 |
1999.07.21 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
NAKAMURA MAKIKO |
分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476;H01L21/311;H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|