DRY CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To efficiently carry out etching. SOLUTION: In this method for planarizing a surface of a sample to be polished, the surface of the sample 107 held in a sample base 114 is brought into contact with a polishing pad 119 while supplying a plasma 106 from a plasma source, and polishing is carried out by moving a relative position between the sample 107 and a polishing tool 119. The dry chemical mechanical polishing method is constituted such that, at polishing, a diameter of the sample 107 is made larger than that of the polishing tool 119 thereby exposing at least a part of the surface of the sample to an atmosphere of the plasma 106.