发明名称 |
EEPROM having stacked dielectric to increase programming speed |
摘要 |
An electrically erasable programmable read only memory (EEPROM) comprises a stacked dielectric tunnel oxide region formed between a write transistor and a sense transistor. The tunnel oxide region permits electron tunneling from a floating gate electrode of a sense transistor to the write transistor. The tunnel oxide region includes a first region that has a single dielectric layer optimized for data retention requirements. The tunnel oxide region also includes a second region having a stacked structure optimized for programming speed and comprising a relatively thin first dielectric layer and a second high-K dielectric layer formed thereon.
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申请公布号 |
US6369421(B1) |
申请公布日期 |
2002.04.09 |
申请号 |
US19980106177 |
申请日期 |
1998.06.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;LI XIAO-YU |
分类号 |
G11C16/04;H01L21/28;H01L21/8247;H01L27/115;H01L29/51;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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