| 摘要 |
A method of manufacturing a semiconductor device such as a DRAM device having a capacitor. The capacitor has an electrode having an HSG structure. The electrode is formed by: forming a cylinder type electrode body which is made of amorphous silicon and which has at least an inner wall surface and an outer wall surface, the forming a cylinder type electrode body comprises at least forming an amorphous silicon film by using a thermal CVD method; and by forming hemispherical grain (HSG) at least at the inner wall surface and at the outer wall surface of the cylinder type electrode body to form a hemispherically grained cylinder type electrode. When the amorphous silicon film is formed by using a thermal CVD method, at least an initial growth temperature of the amorphous silicon film is controlled to be within a range from 450 to 520 degrees Celsius.
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