发明名称 SUBSTRATE SUPPORT FOR HEAT TREATMENT
摘要 <p>PROBLEM TO BE SOLVED: To suppress crystal dislocation due to a flaw resulted from a slip by suppressing to a minim the slip of the substrate to be processed at the supporting part of the substrate. SOLUTION: The support for the substrate for heat treatment is composed of a multiple heat resistant wires 21 fixed allowing slack. The support is constituted to horizontally support the substrate 13 to be processed by putting at least three parts of the underside marginal of the substrate 13 on the multiple wires 21. The support is additionally provided with a ring member 22, the diameter of which is larger than that of the substrate 13. The multiple wires 21 fixed to the ring member 22 are comprised of a pair of wires which are parallel to each other. The multiple wires 21 may be provided radial or in lattice.</p>
申请公布号 JP2002100667(A) 申请公布日期 2002.04.05
申请号 JP20000289825 申请日期 2000.09.25
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 KATO TAKEO
分类号 H01L21/683;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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